Sperrschichten in Halbleiterbauelementen = Couches d'appauvrissement dans les dispositifs semiconducteurs = Depletion layers in semiconductor devicesZSCHAUER, K.-H.Siemens Forschungs- und Entwicklungsberichte. 1986, Vol 15, Num 6, pp 291-295, issn 0370-9736Article

Maximum depletion width of MOS structures at high inversionLEHOVEC, K.Solid-state electronics. 1985, Vol 28, Num 5, pp 531-532, issn 0038-1101Article

Determination of semiconductor parameters and of the vertical structure of devices by numerical analysis of energy-dependent EBIC measurementsKITTLER, M; SCHRÖDER, K.-W.Physica status solidi. A. Applied research. 1983, Vol 77, Num 1, pp 139-151, issn 0031-8965Article

A precise scaling length for depleted regionsSCHRIMPF, R. D; WARNER, R. M. JR.Solid-state electronics. 1985, Vol 28, Num 8, pp 779-782, issn 0038-1101Article

Boundary element method for calculation of depletion layer profilesCUYPERS, F; DE MEY, G.Electronics Letters. 1984, Vol 20, Num 6, pp 229-230, issn 0013-5194Article

Quasi-Fermi levels in MSM structureMAŁACHOWSKI, M. J; STEPNIEWSKI, J.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 820-823, issn 0038-1101Article

DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURECHEIN WEI JEN; CHUNG LEN LEE; TAN FU LEI et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 949-954; BIBL. 9 REF.Article

A new relaxation effect with polymer depletion layersDONATH, E; WALTHER, D; KRABI, D et al.Langmuir. 1996, Vol 12, Num 26, pp 6263-6269, issn 0743-7463Article

A new structure for in-depth history effect characterization on partially depleted SOI transistorsFAYNOT, O; POIROUX, T; CLUZEL, J et al.IEEE International SOI conference. 2002, pp 35-36, isbn 0-7803-7439-8, 2 p.Conference Paper

Theoretical calculations of Debye length, built-in potential and depletion layer width versus dopant density in a heavily doped p-n junction diodeTENG, K. W; LI, S. S.Solid-state electronics. 1985, Vol 28, Num 3, pp 277-285, issn 0038-1101Article

Depletion layer of gate poly-SiWATANABE, Hiroshi.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 10, pp 2265-2271, issn 0018-9383, 7 p.Article

HETEROJONCTION DANS LES CONDITIONS D'APPAUVRISSEMENT NON STATIONNAIREVLASENKO EV; SURIS RA.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 7; PP. 1353-1359; BIBL. 4 REF.Article

Subthreshold surface potential and drain current models for short-channel pocket-implanted MOSFETsBAISHYA, Srimanta; MALLIK, Abhijit; CHANDAN KUMAR SARKAR et al.Microelectronic engineering. 2007, Vol 84, Num 4, pp 653-662, issn 0167-9317, 10 p.Article

The dependence of effective channel width of quasi-one-dimensional split-gate devices on carrier densityDAS, B; MCGINNIS, S; MELLOCH, M. R et al.Microelectronics journal. 2000, Vol 31, Num 2, pp 117-121, issn 0959-8324Article

Demonstration of charge-coupled devices in fully depleted SOISAGE, J. P; BOLKHOVSKY, V; OLIVER, W. D et al.IEEE international SOI conference. 2004, pp 130-132, isbn 0-7803-8497-0, 1Vol, 3 p.Conference Paper

A study of polymer depletion layers by electrophoresis : The influence of viscosity profiles and the nonlinearity of the Poisson-Boltzmann equationDONATH, E; KRABI, A; ALLAN, G et al.Langmuir. 1996, Vol 12, Num 14, pp 3425-3430, issn 0743-7463Article

Schottky-barrier tunneling spectroscopy for the electronic subbands of a δ-doping layerZACHAU, M; KOCH, F; PLOOG, K et al.Solid state communications. 1986, Vol 59, Num 8, pp 591-594, issn 0038-1098Article

Dynamique de la région appauvrie dans un semiconducteur à impureté ioniséeTSYRLIN, L. EH.Žurnal tehničeskoj fiziki. 1984, Vol 54, Num 3, pp 450-454, issn 0044-4642Article

Degradation of body factor (γ) of single gate fully depleted SOI MOSFETs due to short channel effectsKUMAR, Anil; NAGUMO, Toshiharu; TSUTSUI, Gen et al.IEEE international SOI conference. 2004, pp 58-59, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

On causes of ozone depletion over the AntarcticZHUKOV, V. A.Meteorologiâ i gidrologiâ. 1989, Num 12, pp 107-111, issn 0130-2906, 5 p.Article

Electronic transport and depletion of quantum wells by tunneling through deep levels in semiconductor superlatticesCAPASSO, F; MOHAMMED, K; CHO, A. Y et al.Physical review letters. 1986, Vol 57, Num 18, pp 2303-2306, issn 0031-9007Article

Lateral photovoltaic effect in the weakly inverted and in the depleted MOS interface layersSHIKAWA, T; NIU, H; TAKAI, M et al.Japanese journal of applied physics. 1984, Vol 23, Num 10, pp 1314-1319, issn 0021-4922, 1Article

Measurement optical-absorption coefficient in the depletion region of GaAs Schottky-Barrier photodiodeHASEGAWA, S; TANAKA, A; SUKEGAWA, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 8, issn 0021-4922, 1152, 1Article

Accelerated formation of sodium depletion layer on soda lime glass surface by corona discharge treatment in hydrogen atmosphereKAWAGUCHI, Keiga; IKEDA, Hiroshi; SAKAI, Daisuke et al.Applied surface science. 2014, Vol 300, pp 149-153, issn 0169-4332, 5 p.Article

New insights on the hot-carrier characteristics of 55nm PD SOI MOSFETsIOANNOU, D. P; ZHAO, E; COOPER, S et al.IEEE international SOI conference. 2004, pp 205-206, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper